Method of patterning a stack
US9284649B2 · kind B2 · utility
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3References
24Claims
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Inventors
Key dates
| Filing date | Jun 30, 2011 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Dec 24, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.