Semiconductor device comprising an oxide semiconductor
US9287117B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2013 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Nov 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a highly reliable semiconductor device including an oxide semiconductor by suppression of change in its electrical characteristics. Oxygen is supplied from a base insulating layer provided below an oxide semiconductor layer and a gate insulating layer provided over the oxide semiconductor layer to a region where a channel is formed, whereby oxygen vacancies which might be generated in the channel are filled. Further, extraction of oxygen from the oxide semiconductor layer by a source electrode layer or a drain electrode layer in the vicinity of the channel formed in the oxide semiconductor layer is suppressed, whereby oxygen vacancies which might be generated in a channel are suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.