Method for growing epitaxies of a chemical compound semiconductor
US9287122B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2014 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Aug 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/472
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of providing a chemical compound semiconductor channel layer on a substrate for use in a semiconductor fabrication process. The method comprises providing a prelayer over a substrate, providing a barrier layer over the prelayer, and providing an InAs or Sb-based channel layer over the barrier layer. The substrate comprises a gallium arsenide substrate, a silicon substrate, a germanium substrate, or a Ge/Si substrate. The prelayer comprises a graded-temperature arsenic prelayer grown with graded temperature ramped from 300 to 550° C. The barrier layer comprises GaAs with low-growth-temperature growth or an InxGa1-xAs epitaxy with one or multiple GaAs-based layers. The channel layer comprises an InAs epitaxy with low-growth-temperature growth or Al(In)Sb/InAs/Al(In)Sb heterostructures with one or more pairs. Also disclosed is a wafer comprising a prelayer grown over a substrate using MOCVD operations, a barrier layer grown over the prelayer using MOCVD operations, and a channel layer grown over the barrier layer using MOCVD operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.