Metal finger capacitor for high-K metal gate processes
US9287209B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 28, 2011 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Apr 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein provide a structure for finger capacitors, and more specifically metal-oxide-metal (“MOM”) finger capacitors and arrays of finger capacitors. A plurality of Shallow Trench Isolation (STI) formations is associated with every other column of capacitor fingers, with poly fill formations covering the STI formations to provide a more robust and efficient structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.