Semiconductor device and fabricating method thereof
US9287270B2 · kind B2 · utility
10Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 2014 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | May 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
Provided are a semiconductor device and a fabricating method thereof. The semiconductor device includes a storage electrode having a cylinder shape, a dielectric film formed on the storage electrode, and a plate electrode formed on the dielectric film, wherein the plate electrode includes a first semiconductor compound layer and a second semiconductor compound layer sequentially stacked one on the other, and the first semiconductor compound layer has a crystallinity different from that of the second semiconductor compound layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.