Image sensor, method for manufacturing the same, and image processing device having the image sensor
US9287327B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2014 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Jun 20, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.