Semiconductor device and method of fabricating same
US9287397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2013 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Sep 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of fabricating the semiconductor device are disclosed. The method includes forming a plurality of gate electrodes at a predetermined interval on a surface of a semiconductor substrate, forming spacers on sidewalls of the gate electrodes, depositing an interconnection layer conformally on the surface of the semiconductor substrate over the gate electrodes and the spacers, selectively etching the interconnection layer, wherein at least a portion of the interconnection layer that is formed on the surface of the semiconductor substrate and sidewalls of the spacers and located between adjacent gate electrodes remains after the selective etch, and forming an electrical contact on the etched interconnection layer located between the adjacent gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.