Solid-state imaging device and method of manufacturing the solid-state imaging device
US9287423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2012 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Nov 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/00
Abstract
A solid-state imaging device in which a plurality of pixels are two-dimensionally arranged includes a silicon layer; a plurality of photodiodes which are formed in the silicon layer to correspond to the pixels and generate signal charges by performing photoelectric conversion on incident light; and a plurality of color filters formed above the silicon layer to correspond to the plurality of the pixels. A protrusion is formed in a region on a side of the silicon layer between adjacent ones of the color filters wherein the protrusion has a refractive index lower than refractive indices of the adjacent ones of the color filters and, each of the color filters is in contact with the adjacent ones of the color filters, above the protrusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.