Patent · US Active

Ultraviolet reflective rough adhesive contact

US9287449B2 · kind B2 · utility

22Cited by
23References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 9, 2014
Grant dateMar 15, 2016
Priority date
Expiry dateJan 27, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/831
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.