Ultraviolet reflective rough adhesive contact
US9287449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2014 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Jan 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.