Semiconductor light emitting diode and method of producing the same
US9287458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2010 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | May 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A semiconductor light emitting diode comprising: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, wherein: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed, in a view obtained by projecting these electrode portions, on an imaginary plane in parallel with the upper surface of the support substrate, respectively, in a positional relationship that these electrode portions, are offset from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.