Magnetic tunnel junction (MTJ) with a magnesium oxide tunnel barrier
US9287494B1 · kind B1 · utility
2Cited by
582References
18Claims
0Family size
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Key dates
| Filing date | Jul 30, 2013 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Jul 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for fabricating a magnetic tunnel junction (MTJ) is disclosed. The process involves annealing a stack that includes a tunnel barrier layer and cooling the stack under vacuum immediately after annealing. At least one overlayer is deposited on the tunnel barrier layer to form the MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.