Resistive random access memory and method for producing same
US9287501B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2014 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Dec 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
A resistive random access memory includes an oxygen-poor layer disposed on a first electrode layer and formed by indium tin oxide, indium oxide, tin dioxide, or zinc oxide. An insulating layer is disposed on the oxygen-poor layer and is formed by silicon dioxide or hafnium oxide. A second electrode layer is disposed on the insulating layer. A method for producing a resistive random access memory includes preparing a first electrode layer. An oxygen-poor layer is then formed on the first electrode layer. The oxygen-poor layer is formed by indium tin oxide, indium oxide, tin dioxide, or zinc oxide. Next, an insulating layer is formed on the oxygen-poor layer. The insulating layer formed by silicon dioxide or hafnium oxide. A second electrode layer is then formed on the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.