Patent · US Active

Optoelectronic device and method for producing an optoelectronic device

US9287519B2 · kind B2 · utility

4Cited by
1References
14Claims
0Family size

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Key dates

Filing dateAug 27, 2014
Grant dateMar 15, 2016
Priority date
Expiry dateAug 27, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K50/19

Abstract

An optoelectronic device, comprising: a first organic functional layer structure; a second organic functional layer structure; and a charge generating layer structure between the first organic functional layer structure and the second organic functional layer structure, wherein the charge generating layer structure comprises: a first electron-conducting charge generating layer; wherein the first electron-conducting charge generating layer comprises or is formed from an intrinsically electron-conducting substance; a second electron-conducting charge generating layer; and an interlayer between first electron-conducting charge generating layer; and second electron-conducting charge generating layer; and wherein the interlayer comprises at least one phthalocyanine derivative.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.