Patent · US Active

Low cost semiconducting alloy nanoparticles ink and manufacturing process thereof

US9290671B1 · kind B1 · utility

0Cited by
7References
9Claims
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Assignee

Inventors

Key dates

Filing dateJan 3, 2013
Grant dateMar 22, 2016
Priority date
Expiry dateAug 6, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/862
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

Electronic printing devices ink has nanoparticles of semiconducting materials with desired composition, size and band gap and modified with a volatile capping agent. Mercury cadmium telluride is synthesized by refluxing a mixture of metal salt and telluride precursor. Mercury (II) acetate and cadmium (II) acetate are reacted with a tellurium precursor (e.g. tri-n-octylphosphine telluride or telluric acid) in presence of a ligand (e.g. 1-dodecanethiol or oleylamine). This protocol yields nanoparticles of diameter ˜2-1000 nm range. The desired composition of nanoparticles is obtained by varying the relative concentration of the metal precursor. The ink is formulated by modifying the nanoparticles with volatile capping agent and dispersing the modified nanoparticles in a solvent.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.