Thin film transistor and display device having the same
US9291870B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2014 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Aug 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor includes a semiconductor pattern on a base substrate, the semiconductor pattern including an input area, an output area, and a channel area between the input area and the output area, a first insulating layer covering the semiconductor pattern, a control electrode on the first insulating layer, the control electrode overlapping the channel area, a second insulating layer covering the control electrode, an input electrode connected to the input area, an output electrode connected to the output area, and a heat discharge electrode on the second insulating layer, the heat discharge electrode being connected to the control electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.