Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same
US9291899B2 · kind B2 · utility
2Cited by
7References
13Claims
0Family size
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Key dates
| Filing date | Dec 30, 2009 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Mar 2, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G77/70
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.