Solid-state electronic device including dielectric bismuth niobate film formed from solution
US9293257B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Oct 25, 2012 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Oct 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76817
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.