Patent · US Active

Semiconductor device

US9293558B2 · kind B2 · utility

26Cited by

3References

10Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Ralf Siemieniec · Villach, AT
Dethard Peters · Edenkoben, DE
Romain Esteve · Munich, DE

Key dates

Filing date	Nov 26, 2012
Grant date	Mar 22, 2016
Priority date	—
Expiry date	Aug 22, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/405
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes at least two device cells integrated in a semiconductor body. Each device cell includes a drift region, a source region, a drain region arranged between the source region and the drift region, a diode region, a pn junction between the diode region and the drift region, and a trench with a first sidewall, a second sidewall opposite the first sidewall, and a bottom. The body region adjoins the first sidewall, the diode region adjoins the second sidewall, and the pn junction adjoins the bottom of the trench. Each device cell further includes a gate electrode arranged in the trench and dielectrically insulated from the body region, the diode region and the drift region by a gate dielectric. The diode regions of the at least two device cells are distant in a lateral direction of the semiconductor body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.