Semiconductor device and method of manufacturing the same
US9293562B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2015 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Jun 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To improve performance of a semiconductor device. Over a semiconductor substrate, a gate electrode is formed via a first insulating film for a gate insulating film, and a second insulating film extends from over a side wall of the gate electrode to over the semiconductor substrate. Over the semiconductor substrate in a part exposed from the second insulating film, a semiconductor layer, which is an epitaxial layer for source/drain, is formed. The second insulating film has a part extending over the side wall of the gate electrode and a part extending over the semiconductor substrate, and a part of the semiconductor layer lies over the second insulating film in the part extending over the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.