Etchant composition and method of manufacturing metal wiring and thin film transistor substrate using the etchant
US9293565B2 · kind B2 · utility
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6References
18Claims
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Key dates
| Filing date | Dec 9, 2013 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Jan 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/131
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.