Tunnel field effect transistor (TFET) with lateral oxidation

US9293591B2 · kind B2 · utility

Assignee

• The Board of Regents of the University of Texas System · US

Inventors

• Jack Lee · Austin, US
• Han Zhao · Santa Clara, US

Key dates

• Filing date: Oct 14, 2011
• Grant date: Mar 22, 2016
• Expiry date: Sep 20, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/165

Abstract

A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region. The oxide region operates to reduce a tunneling effect in a tunnel region underlying a drain region, during an OFF-state of the TFET. The reduction in tunneling effect results in a reduction or elimination of a flow of OFF-state leakage current between the source region and the drain region. The TFET may have components made from group III-V compound materials.