Semiconductor device and method for manufacturing the same
US9293599B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2014 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | May 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor with stable electric characteristics is provided. A transistor with small variation in electrical characteristics is provided. A miniaturized transistor is provided. A transistor having low off-state current is provided. A transistor having high on-state current is provided. A semiconductor device including the transistor is provided. One embodiment of the present invention is a semiconductor device including an island-shaped stack including a base insulating film and an oxide semiconductor film over the base insulating film; a protective insulating film facing a side surface of the stack and not facing a top surface of the stack; a first conductive film and a second conductive film which are provided over and in contact with the stack to be apart from each other; an insulating film over the stack, the first conductive film, and the second conductive film; and a third conductive film over the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.