Semiconductor element, display device, method for manufacturing semiconductor element, and method for manufacturing display device
US9293600B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2014 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Aug 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
Abstract
A semiconductor element includes a semiconductor layer, a first and a second conductive unit, a gate electrode, and a gate insulating film. The semiconductor layer includes a first portion, a second portion, and a third portion provided between the first portion and the second portion. The first conductive unit is electrically connected to the first portion. The second conductive unit is electrically connected to the second portion. The gate electrode is separated from the first conductive unit, the second conductive unit, and the third portion. The gate electrode opposes the third portion. The gate insulating film is provided between the third portion and the gate electrode. A concentration of nitrogen of the first portion is higher than a concentration of nitrogen of the third portion. A concentration of nitrogen of the second portion is higher than the concentration of nitrogen of the third portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.