Solar cell structure and method for fabricating the same
US9293611B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2014 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Sep 24, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A solar cell structure with a microsphere-roughened antireflection structure comprises a P-type metal contact electrode, a P-type semiconductor layer, a P-type monocrystalline substrate, an N-type semiconductor layer, an N-type metal contact electrode, and a microsphere-roughened antireflection layer. The N-type semiconductor layer and the P-type semiconductor layer are respectively arranged on an upper surface and a lower surface of the P-type monocrystalline substrate. The P-type metal contact electrode is arranged below the P-type semiconductor layer. The N-type metal contact electrode has a specified pattern and is connected with the N-type semiconductor layer. The microsphere-roughened antireflection layer is arranged on an upper surface of the N-type semiconductor layer without covering the N-type metal contact electrode. The microsphere-roughened antireflection layer reduces the reflection of sunlight and increases the transmittance of sunlight to enhance the efficiency of solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.