Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

US9293640B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Joachim Hertkorn · Neukirchen, DE
• Lorenzo Zini · Regensburg, DE
• Jan-Philipp Ahl · Regensburg, DE
• Alexander Frey · Lappersdorf, DE

Key dates

• Filing date: Jun 11, 2013
• Grant date: Mar 22, 2016
• Expiry date: Jun 11, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In at least one embodiment, the method is designed to produce an optoelectronic semiconductor chip. The method includes at least the following steps in the stated sequence: A) providing a growth substrate with a growth side, B) depositing at least one nucleation layer based on AlxGa1-xOyN1-y on the growth side, C) depositing and structuring a masking layer, D) optionally growing a GaN-based seed layer in regions on the nucleation layer not covered by the masking layer, E) partially removing the nucleation layer and/or the seed layer in regions not covered by the masking layer or applying a second masking layer on the nucleation layer or on the seed layer in the regions not covered by the masking layer, and F) growing an AlInGaN-based semiconductor layer sequence with at least one active layer.