Nitride semiconductor light-emitting device and method of manufacturing the same
US9293647B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 5, 2012 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Dec 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
Abstract
A nitride semiconductor light-emitting device is formed of an n-type nitride semiconductor layer, a trigger layer, a V-pit expanding layer, a light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The light-emitting layer has a V-pit formed therein. The trigger layer is made of a nitride semiconductor material having a lattice constant different from that of a material that forms an upper surface of the n-type nitride semiconductor layer. The V-pit expanding layer is made of a nitride semiconductor material having a lattice constant substantially identical to that of the material that forms the upper surface of the n-type nitride semiconductor layer, and the V-pit expanding layer has a thickness of 5 nm or more and 5000 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.