Light emitter with a conductive transparent p-type layer structure
US9293648B1 · kind B1 · utility
2Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2015 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Apr 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light emitting device includes an n-type layer, a p-type layer structure, a layer of p-type nano-dots imbedded in the p-type layer structure, and an active region sandwiched between the n-type layer and the p-type layer structure, where the p-type nano-dots possess a sheet density of 1010 to 1012 cm−2, a lateral dimension of 2-20 nm, and a vertical dimension of 1-5 nm. The p-type layer structure with a layer of p-type nano-dots imbedded therein provides good vertical conductivity and UV transparency. Also provided is a method for making the light emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.