Semiconductor light emitting device

US9293657B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Hiroshi Katsuno · Komatsu, JP
• Satoshi Mitsugi · Kawasaki, JP
• Toshihide Ito · Tokyo, JP
• Shinya Nunoue · Ichikawa, JP

Key dates

• Filing date: May 4, 2015
• Grant date: Mar 22, 2016
• Expiry date: May 4, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/84

Abstract

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.