Semiconductor light-emitting device preventing metal migration
US9293673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2015 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Mar 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0363
Abstract
A semiconductor light-emitting device is configured to prevent or reduce metal migration. The device includes: an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a reflecting layer disposed over the p-type semiconductor layer and containing a metal that tends to migrate; a well ring structure at the p-type semiconductor layer and substantially surrounding the reflecting layer to prevent the metal from migrating towards a side wall of the device; and a metal coating layer over the reflecting layer and extending towards the well ring structure to form an ohmic contact with the p-type semiconductor of the entire well ring structure. The device reliability is improved as the p-type semiconductor layer forms a well ring structure have “pining” effect surrounding the reflecting layer, thereby preventing the metal from migrating towards the device edge along the contact surface between the reflecting layer and the p-type semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.