Patent · US Active

Light emitting device including light emitting element, outer connection electrodes and resin layer

US9293674B2 · kind B2 · utility

25Cited by
0References
11Claims
0Family size

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Key dates

Filing dateFeb 10, 2014
Grant dateMar 22, 2016
Priority date
Expiry dateFeb 10, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/841
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device has a light emitting element, and a resin layer; the light emitting element includes a semiconductor laminated body in which a first semiconductor layer and a second semiconductor layer are laminated in sequence, a second electrode connected to the second semiconductor layer on an upper surface of the second semiconductor layer that forms an upper surface of the semiconductor laminated body, and a first electrode connected to the first semiconductor layer on an upper surface of the first semiconductor layer in which a portion of the second semiconductor layer on one surface of the semiconductor laminated body is removed and a portion of the first semiconductor layer is exposed; and the resin layer is configured to cover at least a side surface of the light emitting element, and an upper surface of the resin layer is lower than the upper surface of the semiconductor laminated body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.