Magnetic memory and shift register memory
US9293696B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2015 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | May 5, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/0808
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetic memory includes a first magnetic unit, a first magnetic layer, a first recording/reproducing element, a first electrode, and a second electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first magnetic unit has a columnar configuration having a hollow portion. The first magnetic layer is connected to a first end portion of the first magnetic unit, the first magnetic layer extends in a direction intersecting the first direction. The first recording/reproducing element is provided in contact with the first magnetic layer. The first electrode is electrically connected to the first magnetic layer. The second electrode is connected to a second end portion of the first magnetic unit on a side opposite to the first end portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.