CMOS RF switch device and method for biasing the same
US9294073B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2014 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Sep 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/7215
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
According to certain aspects, a method includes determining whether to amplify a radio frequency (RF) signal by a first gain achievable by a first circuit or a second gain achievable by a second circuit, amplification of the first and second circuits respectively configured to be turned on or off by first and second switches, the first switch in the on state and the second switch in the off state resulting in the RF signal being amplified by the first gain, and the first switch in the off state and the second switch in the on state resulting in the RF signal being amplified by the second gain; and applying or inducing application of a first bias voltage or a second bias voltage to an isolated well of the first switch upon determination that the RF signal is to be amplified by the first gain or the second gain, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.