Device with a single crystal diamond substrate with a buried electrically conducting layer
US9295152B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Apr 14, 2015 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Apr 14, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A device comprising a single crystal diamond substrate with a buried electrically conducting layer with μm square openings spaced apart milled into the diamond by ablating the carbon above wherein the step of ablating uses a diode pumped tripled Nd:YAG laser at 355 nm and wherein the square openings have electrical contacts and wherein the resistance measured between the square openings is dominated by the buried electrically conducting layer and on the order of about 1 kΩ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.