Single layer 3D tracking semiconductor detector

US9297912B2 · kind B2 · utility

Assignees

• CERN—EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH · CH
• FRIEDRICH-ALEXANDER-UNIVERSITÄT ERLANGEN-NÜRNBERG · DE
• CZECH TECHNICAL UNIVERSITY IN PRAGUE · CZ

Inventors

• Michael T. Campbell · Grand Rapids, US
• Thilo Michel · Koblenzer Straße, DE
• Jan Jakubek · Hýskov, CZ

Key dates

• Filing date: Sep 21, 2011
• Grant date: Mar 29, 2016
• Expiry date: Apr 15, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/301
• WIPO field: Environmental technology
• WIPO sector: Chemistry

Abstract

The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighboring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighboring read-out circuits (20). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighboring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane.