Composition for resist patterning and method of manufacturing optical structures using imprint lithography
US9298089B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Jul 24, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/028
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a composition for resist patterning comprising a thiol; at least one -ene monomer; at least one polymerization initiator; and, optionally, a metal oxide used in an amount of 0.1 to 50 wt. % per weight of the composition; the thiol and -ene monomer are used in a stoichiometric ratio with a refractive index between 1.6 and 1.8. The composition is used in a patterning process wherein the composition is dispensed to the substrate, is covered with a mask, and is cured, e.g., by UV radiation, at room temperature with light having a wavelength in the range of 200 nm to 450 nm. The process may be carried out with thermal annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.