Patent · US Active

PLZT capacitor on glass substrate

US9299496B2 · kind B2 · utility

2Cited by
9References
6Claims
0Family size

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Key dates

Filing dateOct 2, 2015
Grant dateMar 29, 2016
Priority date
Expiry dateOct 2, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D1/682
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.