Semiconductor device and manufacturing method therefor
US9299629B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2011 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Nov 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a semiconductor substrate provided with a scribe region and an IC region. A first insulating film is disposed on the semiconductor substrate across the scribe region and the IC region. At least one separation groove is provided in the first insulating film in the scribe region. Side walls made of a plug metal film are formed only on respective lateral walls of the separation groove so that the plug metal film on the lateral walls does not extend out of the separation groove and does not exist on an upper surface of the first insulating film. A second insulating film covers at least the side walls formed on the respective lateral walls of the separation groove so that the side walls are disposed under the second insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.