Semiconductor device
US9299632B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Aug 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/35121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Even when a thermal stress is applied to an electrode pad, the electrode pad is prevented from being moved. A substrate of a semiconductor chip has a rectangular planar shape. The semiconductor chip has a plurality of electrode pads. The center of a first electrode pad is positioned closer to the end of a first side in the direction along the first side of the substrate as compared to the center of a first opening. Thus, in a part of the first electrode pad covered with an insulating film, a width of the part closer to the end of the first side in the direction along the first side is larger than another width of the part opposite to the above-mentioned width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.