Integrated CMOS back cavity acoustic transducer and the method of producing the same
US9299671B2 · kind B2 · utility
2Cited by
4References
27Claims
0Family size
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Key dates
| Filing date | Oct 15, 2013 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Oct 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12042
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A MEMS device includes a MEMS substrate with a movable element. Further included is a CMOS substrate with a cavity, the MEMS substrate disposed on top of the CMOS substrate. Additionally, a back cavity is connected to the CMOS substrate, the back cavity being formed at least partially by the cavity in the CMOS substrate and the movable element being acoustically coupled to the back cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.