Patent · US Active

Abutment structure of semiconductor cell

US9299683B2 · kind B2 · utility

0Cited by
1References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 13, 2012
Grant dateMar 29, 2016
Priority date
Expiry dateSep 4, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An abutment structure comprises a power rail, a ground rail parallel to the power rail, first cells and second cells. An area is defined between the power and the ground rails. A portion of each first and second cell overlaps the power and the ground rails, and another portion thereof is within the area. The first cells are within the abutment structure with original patterns thereof. The second cells respectively has an original pattern and a base pattern being a flip pattern of the original pattern, and are within the area with alternate of the original and the base patterns. The first and the second cells are within the area alternately without overlapping. Alternatively, the first and the second cells may also be within different areas, and the second cells are within different areas respectively with the base pattern and a flip pattern of the base pattern thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.