Display device and method of fabricating the same
US9299757B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 26, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Aug 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1216
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A display device comprising one or more thin-film transistors (“TFTs”) each configured to include an active layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode are formed on a substrate. A storage capacitor including a first storage electrode and a second storage electrode overlapping the first storage electrode with the gate insulating layer interposed there between is also formed on the substrate. A top surface of the first storage electrode may include hillocks and the gate insulating layer is formed between the first storage electrode and the second storage electrode to conform to the shape of the top surface of the first storage electrode with the hillocks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.