Semiconductor device with an electric field reduction mechanism in an edge termination region surrounding the active region
US9299771B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2015 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Mar 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/664
Abstract
In a semiconductor device, an edge termination region which surrounds an active region includes an electric field reduction mechanism including guard rings, first field plates which come into contact with the guard rings, and second field plates which are provided on the first field plates, with an interlayer insulating film interposed therebetween. The second field plate is thicker than the first field plate. A gap between the second field plates is greater than a gap between the first field plates. A barrier metal film is provided between the second field plate and the interlayer insulating film so as come into conductive contact with the second field plate. A gap between the barrier metal films is equal to the gap between the first field plates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.