Semiconductor device with a field plate trench having a thick bottom dielectric
US9299793B2 · kind B2 · utility
1Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | May 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a power device, such as a power MOSFET, and methods for fabricating same. The device includes a field plate trench. The device further includes first and second trench dielectrics inside the field plate trench. The device also includes a field plate situated over the first trench dielectric and within the second trench dielectric. A combined thickness of the first and second trench dielectrics at a bottom of the field plate trench is greater than a sidewall thickness of the second trench dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.