Nitride-based transistors having structures for suppressing leakage current
US9299828B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 2, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Dec 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride-based transistor includes a semiconductor structure, a gate electrode and a leakage current suppression structure. The semiconductor structure includes a first nitride-based semiconductor layer doped with impurities of a first conductivity type, a second nitride-based semiconductor layer doped with impurities of a second conductivity type, and a third nitride-based semiconductor layer doped with impurities of the first conductivity type. The gate electrode overlaps the second nitride-based semiconductor layer. The leakage current suppression structure is disposed along edges of the semiconductor structure. The leakage current suppression structure includes a depletion layer in at least one of the first and third nitride-based semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.