Diffusion barrier coated substrates and methods of making the same

US9299845B2 · kind B2 · utility

Assignee

• Thin Film Electronics ASA · NO

Inventors

• Arvind Kamath · Los Altos, US
• Michael Kocsis · San Francisco, US
• Kevin Robert McCarthy · Park City, US
• Gloria Wong · San Jose, US

Key dates

• Filing date: May 28, 2010
• Grant date: Mar 29, 2016
• Expiry date: Dec 10, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6755

Abstract

Semiconductor devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The semiconductor devices include a metal substrate, a diffusion barrier layer on the metal substrate, an insulator layer on the diffusion barrier layer, and a semiconductor layer on the insulator layer. The method includes forming a diffusion barrier layer on the metal substrate, forming an insulator layer on the diffusion barrier layer; and forming a semiconductor layer on the insulator layer. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into a semiconductor device formed thereon.