Semiconductor light emitting device
US9299901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Feb 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8312
Abstract
According to one embodiment, a semiconductor light emitting device includes a metal layer, a stacked structural body, a first electrode, a pad electrode, a first conductive layer, a second conductive layer and an insulating layer. The metal layer includes a major surface having a first region, a second region, a third region and a fourth region. The stacked structural body includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer includes a first portion and a second portion. The second semiconductor layer is provided between the first region and the first portion. The first electrode is provided between the second region and the second portion. The pad electrode is provided on the third region. The first conductive layer is provided between the second region and the first electrode and between the third region and the pad electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.