Hall sensor with improved doping profile
US9299919B1 · kind B1 · utility
6Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2015 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Feb 19, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/07
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A Hall sensor with improved doping profile is disclosed. The Hall sensor includes a semiconductor substrate, a sensing region formed on the substrate, an isolation region formed on the sensing region, and a high concentration doping region formed on an upper portion of the sensing region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.