Methods of continuously wet etching a patterned substrate
US9301397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2012 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Feb 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1545
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Metalized web substrate is wet etched in a reaction vessel by contacting with oxidizing and metal complexing agent to remove metal from unpatterned region. Following etching, substrate is rinsed, and rinse is at least partly recycled. Concentrations of oxidizing and metal complexing agents in the etchant bath are maintained by delivering replenishment feeds of each. Concentration of metal in the etchant bath is maintained by discharging some of the etchant bath. Replenishment rates of oxidizing and metal complexing agents and etchant removal rate are determined based at least in part on rate that metal etched from the substrate enters the etchant bath.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.