Film deposition apparatus with low plasma damage and low processing temperature
US9303312B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2014 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Aug 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/345
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A deposition system includes a magnetron sputter deposition source that includes a backing frame that includes a window and a closed loop around the window. The backing frame includes inside surfaces towards the window, one or more sputtering targets mounted on inside surfaces of the backing frame, and one or more magnets mounted on outside surfaces of the backing frame. The one or more sputtering targets include sputtering surfaces that define internal walls of the window. The one or more magnets can produce a magnetic field near the one or more sputtering surfaces. A substrate includes a deposition surface oriented towards the window in the backing frame. The deposition surface receives sputtering material(s) from the one or more sputtering targets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.