Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
US9305476B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2015 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | May 12, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/62
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.